BDY58S SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: BDY58S 
Gamintojas: Seme
Pakuotė:
Taikymas:
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
BDY58S PDF
Datasheet PDF : View
BDY58S PANAŠUS MODELIS:
- BDY53
SILICON TRANSISTORS DIFFUSED MESA - BDY54
Bipolar Device - BDY55
NPNSILICON TRANSISTORS/ DIFFUSED MESA(LF Large Signal Power Amplificational High Current Fast Switching) - BDY55X
NPN - BDY56
NPNSILICON TRANSISTORS DIFFUSED MESA(LF Large Signal Power Amplificational High Current Fast Switching) - BDY57
Silicon Power Transistors - BDY58
Silicon Power Transistors - BDY58A
Bipolar Device - BDY58B
TRANSISTOR | BJT | NPN | 125V V(BR)CEO | 25A I(C) | TO-3 - BDY58C
NPN - BDY58S
Bipolar Device Hermetically sealed Metal Package