BDY58B SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: BDY58B 
Gamintojas:
Pakuotė:
Taikymas: 125v25a3
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
BDY58B PDF
Datasheet PDF :
BDY58B PANAŠUS MODELIS:
- BDY53
SILICON TRANSISTORS DIFFUSED MESA - BDY54
Bipolar Device - BDY55
NPNSILICON TRANSISTORS/ DIFFUSED MESA(LF Large Signal Power Amplificational High Current Fast Switching) - BDY55X
NPN - BDY56
NPNSILICON TRANSISTORS DIFFUSED MESA(LF Large Signal Power Amplificational High Current Fast Switching) - BDY57
Silicon Power Transistors - BDY58
Silicon Power Transistors - BDY58A
Bipolar Device - BDY58B
TRANSISTOR | BJT | NPN | 125V V(BR)CEO | 25A I(C) | TO-3 - BDY58C
NPN - BDY58S
Bipolar Device Hermetically sealed Metal Package