MJE172G SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: MJE172G 
Gamintojas: ONSEMI[ON Semiconductor]
Pakuotė:
Taikymas: 87228722125
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
MJE172G PDF
Datasheet PDF : View
MJE172G PANAŠUS MODELIS:
- MJE1123
DROPOUT TRANSISTOR AMPERES VOLTS - MJE12007
Silicon Power Transistors - MJE122
COMPLEMENTARY SILICON POWER DARLINGTONS - MJE127
COMPLEMENTARY SILICON POWER DARLINGTONS - MJE13001
EPITAXIAL SILICON TRANSISTOR - MJE13001AL
Triple Diffused Silicon Transistor - MJE13002
POWER TRANSISTORS(1.5A,300-400V,40W) - MJE13002A
SILICON TRIPLE DIFFUSED MESA TYPE - MJE13003
SILICON TRANSISTOR - MJE13003-TO-126
EPITAXIAL SILICON TRANSISTOR - MJE13003-TO-220
EPITAXIAL SILICON TRANSISTOR - MJE13003-X-T60-F-K
EPITAXIAL SILICON TRANSISTOR - MJE13003-X-TA3-F-T
EPITAXIAL SILICON TRANSISTOR - MJE13003D
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR - MJE13003G
SWITCHMODE Series Silicon Power Transistor VOLTS WATTS