MJE13003G SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: MJE13003G 
Gamintojas: ONSEMI[ON Semiconductor]
Pakuotė:
Taikymas:
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
MJE13003G PDF
Datasheet PDF : View
MJE13003G PANAŠUS MODELIS:
- MJE13001
EPITAXIAL SILICON TRANSISTOR - MJE13001AL
Triple Diffused Silicon Transistor - MJE13002
POWER TRANSISTORS(1.5A,300-400V,40W) - MJE13002A
SILICON TRIPLE DIFFUSED MESA TYPE - MJE13003
SILICON TRANSISTOR - MJE13003-TO-126
EPITAXIAL SILICON TRANSISTOR - MJE13003-TO-220
EPITAXIAL SILICON TRANSISTOR - MJE13003-X-T60-F-K
EPITAXIAL SILICON TRANSISTOR - MJE13003-X-TA3-F-T
EPITAXIAL SILICON TRANSISTOR - MJE13003D
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR - MJE13003G
SWITCHMODE Series Silicon Power Transistor VOLTS WATTS - MJE13003HV
TRIPLE DIFFUSED TRANSISTOR - MJE13003L-X-T60-F-K
EPITAXIAL SILICON TRANSISTOR - MJE13003L-X-TA3-F-T
EPITAXIAL SILICON TRANSISTOR - MJE13004
POWER TRANSISTORS(4A,300-400V,75W)