KM416C1004BJ-L6 SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: KM416C1004BJ-L6 
Gamintojas: Samsung
Pakuotė: SOJ
Taikymas: 5v1m1660ns
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
KM416C1004BJ-L6 PDF
Datasheet PDF : View
KM416C1004BJ-L6 PANAŠUS MODELIS:
- KM416C1004BJ-45
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1004BJ-5
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1004BJ-6
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416C1004BJ-7
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns - KM416C1004BJ-L45
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1004BJ-L5
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1004BJ-L6
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416C1004BJ-L7
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns - KM416C1004BT-45
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1004BT-5
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1004BT-6
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416C1004BT-7
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns - KM416C1004BT-L45
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1004BT-L5
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1004BT-L6
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns