IRFR9010 SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: IRFR9010 
Gamintojas: Samsung semiconductor
Pakuotė:
Taikymas:
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
IRFR9010 PDF
Datasheet PDF : View
IRFR9010 PANAŠUS MODELIS:
- IRFR9010
P-CHANNEL POWER MOSFETS - IRFR9012
TRANSISTOR | MOSFET | P-CHANNEL | 50V V(BR)DSS | 4.5A I(D) | TO-252AA - IRFR9014
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) - IRFR9014PBF
Power MOSFET - IRFR9014TR
Power MOSFET - IRFR9014TRL
HEXFET Power MOSFET - IRFR9014TRLPBF
Power MOSFET - IRFR9014TRPBF
Power MOSFET - IRFR9015
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4.5A I(D) | TO-252AA - IRFR9020
REPETITIVE AVALANCHE DV/DT RATED HEXFET TRANSISTORS - IRFR9020PBF
Power MOSFET - IRFR9020TR
Power MOSFET - IRFR9020TRL
Power MOSFET - IRFR9020TRLPBF
Power MOSFET - IRFR9020TRPBF
Power MOSFET