IRF9133 SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: IRF9133 
Gamintojas: SAMSUNG[Samsung semiconductor]
Pakuotė:
Taikymas:
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
IRF9133 PDF
Datasheet PDF : View
IRF9133 PANAŠUS MODELIS:
- IRF9130
P-CHANNEL POWER MOSFETS - IRF9130SMD
P-CHANNEL POWER MOSFET HI.REL APPLICATIONS - IRF9130SMD05
P-CHANNEL POWER MOSFET HI-REL APPLICATIONS - IRF9131
P-CHANNEL POWER MOSFETS - IRF9132
P-CHANNEL POWER MOSFETS - IRF9133
P-CHANNEL POWER MOSFETS - IRF9140
P-CHANNEL POWER MOSFET - IRF9140SM
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 14A I(D) | LLCC - IRF9141
P-CHANNEL POWER MOSFETS - IRF9142
P-CHANNEL POWER MOSFETS - IRF9143
P-CHANNEL POWER MOSFETS - IRF9150
-25A, -100V, 0.150 P-Channel Power MOSFET - IRF9151
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-204AA - IRF9230
TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) - IRF9231
-5.5A -6.5A, -150V -200V, P-Channel Power MOSFETs