IRF830/D SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: IRF830/D 
Gamintojas:
Pakuotė:
Taikymas:
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
IRF830/D PDF
Datasheet PDF :
IRF830/D PANAŠUS MODELIS:
- IRF830
PowerMOS transistor Avalanche energy rated - IRF830/D
Power Field Effect Transistor - IRF830A
HEXFET Power MOSFET - IRF830AL
Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A) - IRF830ALPBF
Power MOSFET - IRF830APBF
HEXFET Power MOSFET - IRF830AS
Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A) - IRF830ASPBF
Power MOSFET - IRF830ASTRL
Power MOSFET - IRF830ASTRLPBF
Power MOSFET - IRF830ASTRR
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-263AB - IRF830B
500V N-Channel MOSFET - IRF830FI
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 3A I(D) | TO-220VAR - IRF830FP
POWER MOSFET - IRF830PBF
Power MOSFET