BUZ213 SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: BUZ213 
Gamintojas: Siemens Semiconductor Group
Pakuotė:
Taikymas:
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
BUZ213 PDF
Datasheet PDF : View
BUZ213 PANAŠUS MODELIS:
- BUZ20
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated) - BUZ201
main ratings - BUZ202
MAIN RATINGS - BUZ205
SIPMOS Power Transistor channel Enhancement mode FREDFET) - BUZ206
main ratings - BUZ21
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated) - BUZ210
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 10.5A I(D) | TO-204AA - BUZ211
N-Channel Enhancement MOSFET - BUZ213
main ratings - BUZ214
main ratings - BUZ215
SIPMOS Power Transistor channel Enhancement mode FREDFET) - BUZ216
main ratings - BUZ21CHIP
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 19A I(D) | CHIP - BUZ21L
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated Logic Level) - BUZ21SMD
SIPMOS Power Transistor