BUZ102S-4 SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: BUZ102S-4 
Gamintojas: Infineon
Pakuotė:
Taikymas:
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
BUZ102S-4 PDF
Datasheet PDF : View
BUZ102S-4 PANAŠUS MODELIS:
- BUZ102
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated rated) - BUZ102AL
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated Logic Level rated) - BUZ102S
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated dv/dt rated) - BUZ102S-4
SIPMOS Power Transistor - BUZ102S4
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 55V V(BR)DSS | 6.4A I(D) | SO - BUZ102SE3045
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,52A I(D),TO-263AB - BUZ102SE3045A
SIPMOS Power Transistor - BUZ102SL
SIPMOS Power Transistor channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) - BUZ102SL-4
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated rated) - BUZ102SL4
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 55V V(BR)DSS | 6.2A I(D) | SO - BUZ102SLE3045
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 47A I(D) | TO-263AB