Laisvas Specifikacijos

BUZ101SL-4 PANAŠUS MODELIS:

BUZ101S
SIPMOS Power Transistor
BUZ101SE3045
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 22A I(D) | TO-263AB
BUZ101SE3045A
N-Channel Enhancement MOSFET
BUZ101SL
SIPMOS Power Transistor
BUZ101SL-4
SIPMOS Power Transistor
BUZ101SL4
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 55V V(BR)DSS | 4.1A I(D) | SO
BUZ101SLE3045
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 20A I(D) | TO-263AB
BUZ101SLE3045A
SIPMOS Power Transistor channel Enhancement mode Logic Level Avalanche-rated)

BUZ101SL-4 SPECIFIKACIJAS IR TAIKYMAS

Elektronikos dalys: BUZ101SL-4

Gamintojas: Infineon

Pakuotė:

Taikymas:

Pin:

Temperatūra: Min °C | Maks °C

Dydis: KB

Datasheet PDF : View