BUX11N SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: BUX11N 
Gamintojas: SEME-LAB[Seme
Pakuotė:
Taikymas:
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
BUX11N PDF
Datasheet PDF : View
BUX11N PANAŠUS MODELIS:
- BUX10
HIGH POWER SILICON TRANSISTOR - BUX100
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 750MA I(C) | SOT-82 - BUX1003
HIGH POWER SILICON TRANSISTOR - BUX10A
TRANSISTOR | BJT | NPN | 125V V(BR)CEO | 25A I(C) | TO-3 - BUX10P
TRANSISTOR | BJT | NPN | 125V V(BR)CEO | 25A I(C) | SOT-93 - BUX10X
MULTI EPITAXIAL POWER TRANSISTOR - BUX10_03
HIGH POWER NPN SILICON TRANSISTOR - BUX11
Power Transistors - BUX11A
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR - BUX11N
Bipolar Device Hermetically sealed Metal Package - BUX11P
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 20A I(C) | SOT-93 - BUX12
MULTI EPITAXIAL POWER TRANSISTOR - BUX12CECC
NPN - BUX12P
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 20A I(C) | SOT-93 - BUX13
TRANSISTOR | BJT | NPN | 325V V(BR)CEO | 15A I(C) | TO-204AA