BFP181W SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: BFP181W 
Gamintojas: Siemens Semiconductor Group
Pakuotė:
Taikymas: 05ma12ma
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
BFP181W PDF
Datasheet PDF : View
BFP181W PANAŠUS MODELIS:
- BFP136
- BFP136W
Silicon Transistor power amplifier DECT systems) - BFP177
BFP177 - Tranzystor krzemowy ??dniej mocy. wielkiej cz??otliwo?? - BFP178
BFP178 - Tranzystor krzemowy ??dniej mocy. wielkiej cz??otliwo?? - BFP179
BFP179 - Tranzystor krzemowy ??dniej mocy. wielkiej cz??otliwo?? - BFP180
Silicon Transistor - BFP180W
- BFP181
Silicon Transistor noise, high-gain broadband amplifiers collector currents from 0.5mA 12mA) - BFP181R
Silicon Transistor noise, high-gain broadband amplifiers collector currents from 0.5mA 12mA) - BFP181T
Silicon Planar Transistor - BFP181TRW
Silicon Planar Transistor - BFP181TW
Silicon Planar Transistor - BFP181W
Silicon Transistor noise, high-gain broadband amplifiers collector currents from 0.5mA 12mA) - BFP182
Silicon Transistor - BFP182R
Silicon Transistor