BDS12IG SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: BDS12IG 
Gamintojas: SEME-LAB[Seme
Pakuotė:
Taikymas: to257
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
BDS12IG PDF
Datasheet PDF : View
BDS12IG PANAŠUS MODELIS:
- BDS10
SILICON EPITAXIAL BASE TO220 METAL SMD1 CERAMIC SURFACE MOUNT PACKAGES - BDS10IG
SILICON EPITAXIAL BASE TO257 METAL PACKAGE - BDS10SMD
SILICON EPITAXIAL BASE TO220 METAL SMD1 CERAMIC SURFACE MOUNT PACKAGES - BDS10SMD05
NPN - BDS11
SILICON EPITAXIAL BASE TO220 METAL SMD1 CERAMIC SURFACE MOUNT PACKAGES - BDS11CECC
NPN - BDS11IG
SILICON EPITAXIAL BASE TO257 METAL PACKAGE - BDS11SMD
SILICON EPITAXIAL BASE TO220 METAL SMD1 CERAMIC SURFACE MOUNT PACKAGES - BDS11SMD05
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 15A I(C) | SMT - BDS12
SILICON EPITAXIAL BASE TO220 METAL SMD1 CERAMIC SURFACE MOUNT PACKAGES - BDS12CECC
NPN - BDS12IG
SILICON EPITAXIAL BASE TO257 METAL PACKAGE - BDS12SMD
SILICON EPITAXIAL BASE TO220 METAL SMD1 CERAMIC SURFACE MOUNT PACKAGES - BDS12SMD05
NPN - BDS13
SILICON EPITAXIAL BASE TO220 METAL SMD1 CERAMIC SURFACE MOUNT PACKAGES