BCX58VII SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: BCX58VII 
Gamintojas:
Pakuotė:
Taikymas: 32v100ma92
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
BCX58VII PDF
Datasheet PDF :
BCX58VII PANAŠUS MODELIS:
- BCX58
Silicon Transistors (High current gain collector-emitter saturation voltage) - BCX58-10
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | TO-92 - BCX58-7
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | TO-92 - BCX58-8
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | TO-92 - BCX58-9
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | TO-92 - BCX58BCX59
Silicon Transistors (High current gain collector-emitter saturation voltage) - BCX58IX
Silicon Transistors (High current gain collector-emitter saturation voltage) - BCX58VII
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | TO-92 - BCX58VIII
Silicon Transistors (High current gain collector-emitter saturation voltage) - BCX58X
Silicon Transistors (High current gain collector-emitter saturation voltage)