3N165-6 SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: 3N165-6 
Gamintojas: LINEAR[Linear Integrated Systems]
Pakuotė:
Taikymas:
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Temperatūra: Min °C | Maks °C
Dydis: KB
3N165-6 PDF
Datasheet PDF : View
3N165-6 PANAŠUS MODELIS:
- 3N161
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH - 3N163
P-CHANNEL ENHANCEMENT MODE - 3N163-4
P-CHANNEL ENHANCEMENT MODE - 3N164
P-CHANNEL ENHANCEMENT MODE - 3N165
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier - 3N165-6
MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET - 3N166
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier - 3N169
TRANSISTOR | MOSFET | N-CHANNEL | 25V V(BR)DSS | 30MA I(D) | TO-72