2SC5706D SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: 2SC5706D 
Gamintojas: SeCoS
Pakuotė:
Taikymas:
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
2SC5706D PDF
Datasheet PDF : View
2SC5706D PANAŠUS MODELIS:
- 2SC5700
Silicon Epitaxial VHF/UHF wide band amplifier - 2SC5700WB-TR-E
Silicon Epitaxial VHF/UHF wide band amplifier - 2SC5702
Silicon Epitaxial High Frequency Amplifier Oscillator - 2SC5702ZS-TL-E
Silicon Epitaxial High Frequency Amplifier Oscillator - 2SC5703
TOSHIBA Transistor Silicon Epitaxial Type - 2SC570306
Silicon Epitaxial Type High-Speed Switching Applications - 2SC5703_06
Silicon NPN Epitaxial Type High-Speed Switching Applications - 2SC5704
BJT - 2SC5704(NE662M16)
Discrete - 2SC5704-T3
TRANSISTOR | BJT | NPN | 3.3V V(BR)CEO | 35MA I(C) | TSOP - 2SC5706
POWER TRANSISTOR(5A,50V,15W) - 2SC5706D
Silicon General Purpose Transistor - 2SC5706TP
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-251VAR - 2SC5706TP-FA
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-252VAR - 2SC5707
PNP/NPN Epitaxial Planar Silicon Transistors