2SC307506 SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: 2SC307506 
Gamintojas: Toshiba Semiconductor
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2SC307506 PDF
Datasheet PDF : View
2SC307506 PANAŠUS MODELIS:
- 2SC3070
High-hFE, Low-Frequency General-Purpose Applications - 2SC3071
Epitaxial Planar Silicon Transistor - 2SC3072
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS - 2SC3072A
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-251AA - 2SC3072B
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-251AA - 2SC3072C
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-251AA - 2SC3073
SILICON EPITAXIAL TYPE(PCT PROCESS) - 2SC3074
HIGH CURRENT SWITCHING APPLICATIONS - 2SC3074O
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-251 - 2SC3074Y
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-251 - 2SC3075
TRANSISTOR (SWITCHING REGULATOR HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS) - 2SC307506
Silicon Triple Diffused Type process) Switching Regulator High Voltage Switching - 2SC3075_06
Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching - 2SC3076
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS - 2SC3076O
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-251AA