2SA2009R SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: 2SA2009R 
Gamintojas:
Pakuotė:
Taikymas: 120v20ma70
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
2SA2009R PDF
Datasheet PDF :
2SA2009R PANAŠUS MODELIS:
- 2SA2002
HIGH CURRENT APPLICATION SILICON EPITAXIAL TYPE MICRO(FRAME TYPE) - 2SA2004
Silicon epitaxial planer type - 2SA2005
Audio Amplifier output Velosity Modulation (-160V,-1.5A) - 2SA2006
High-speed Switching Transistor(???????????) - 2SA2007
High-speed Switching Transistor (−60V,−12A) - 2SA2007F
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 12A I(C) | TO-220FN - 2SA2009
Silicon epitaxial planer type - 2SA2009R
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | SC-70 - 2SA2009S
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | SC-70 - 2SA2009T
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | SC-70 - 2SA201
2SA203 - 2SA2010
Silicon epitaxial planer type - 2SA2011
DC/DC Converter Applications - 2SA2012
DC/DC Converter Applications - 2SA2013
DC/DC Converter Applications