2N6707 SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: 2N6707 
Gamintojas: Continental Device India Limited
Pakuotė:
Taikymas:
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
2N6707 PDF
Datasheet PDF : View
2N6707 PANAŠUS MODELIS:
- 2N6701
TRANSISTOR | BJT | NPN | 50MA I(C) | MICRO-X - 2N6702
Silicon Power Transistors - 2N6703
High-Current silicon NPN Versawatt Transistors - 2N6704
High-Current silicon NPN Versawatt Transistors - 2N6705
- 2N6706
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-237VAR - 2N6707
- 2N6708
SILICON PLANAR EPITAXIAL TRANSISTOR - 2N6709
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-237VAR - 2N6710
PNP SILICON PLANAR EPITAXIAL TRANSISTOR - 2N6711
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-237VAR - 2N6712
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | TO-237VAR - 2N6713
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-237VAR - 2N6714
Power Transistors - 2N6715
SILICON PLANAR MEDIUM POWER TRANSISTORS