2N5813 SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: 2N5813 
Gamintojas: Micro Electronics
Pakuotė:
Taikymas:
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
2N5813 PDF
Datasheet PDF : View
2N5813 PANAŠUS MODELIS:
- 2N580
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 400MA I(C) | TO-5 - 2N5804
Bipolar Device Hermetically sealed Metal Package - 2N5805
Silicon NPN Power Transistors - 2N581
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-5 - 2N5810
Small Signal Transistors TO-92 Case (Continued) - 2N5811
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTOR - 2N5812
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTOR - 2N5813
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTOR - 2N5814
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTOR - 2N5815
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTOR - 2N5816
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTOR - 2N5817
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTOR - 2N5818
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTOR - 2N5819
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTOR - 2N582
TRANSISTOR | BJT | PNP | 14V V(BR)CEO | 100MA I(C) | TO-5