2N5302G SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: 2N5302G 
Gamintojas: ONSEMI[ON Semiconductor]
Pakuotė:
Taikymas: 8722
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
2N5302G PDF
Datasheet PDF : View
2N5302G PANAŠUS MODELIS:
- 2N5301
Silicon Power Transistors - 2N5302
Bipolar Device Bipolar Device Metal Package. - 2N5302/D
High-Power NPN Silicon Transistor - 2N530206
High−Power Silicon Transistor - 2N5302G
High−Power Silicon Transistor - 2N5302_06
High−Power NPN Silicon Transistor - 2N5303
HIGH POWER SILICON TRANSISTOR - 2N5304
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 10A I(C) | TO-210AC - 2N5305
SILICON DARLINGTON TRANSISTORS - 2N5306
SILICON DARLINGTON TRANSISTORS - 2N530602
Darlington Transistor - 2N5306A
SILICON DARLINGTON TRANSISTORS - 2N5306_02
NPN Darlington Transistor - 2N5307
Darlington Transistor - 2N530702
General Purpose Amplifier