1N1119B SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: 1N1119B 
Gamintojas: Microsemi
Pakuotė: DO4
Taikymas: 12a50v
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
1N1119B PDF
Datasheet PDF : View
1N1119B PANAŠUS MODELIS:
- 1N111
GOLD BONDED DIODES - 1N1119
Silicon Power Rectifier - 1N1119A
12A silicon power rectifier, 50V - 1N1119AR
12A silicon power rectifier, 50V - 1N1119B
12A silicon power rectifier, 50V - 1N1119R
12A silicon power rectifier, 50V - 1N1119RB
12A silicon power rectifier, 50V - 1N112
GOLD BONDED DIODES - 1N1124
Silicon Power Rectifier - 1N1124A
Silicon Power Rectifier - 1N1124A1
AMPS 200-600VOLTS 5usec STANDARD RECOVERY RECTIFIER - 1N1124A_1
3 AMPS 200-600VOLTS 5usec STANDARD RECOVERY RECTIFIER - 1N1124RA
MILITARY SILICON POWER RECTIFIER - 1N1125
Silicon Power Rectifier - 1N1125A
Standard Rectifier more than 500ns)