IRF120 SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: IRF120 
Gamintojas: Samsung semiconductor
Pakuotė:
Taikymas:
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
IRF120 PDF
Datasheet PDF : View
IRF120 PANAŠUS MODELIS:
- IRF100
500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED - IRF100S
Analog IC - IRF101
N-Channel Power MOSFETs, 60-100V - IRF1010
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | TO-220AB - IRF1010E
Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A - IRF1010EL
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) - IRF1010ELPBF
HEXFET Power MOSFET - IRF1010EPBF
HEXFET? Power MOSFET - IRF1010ES
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) - IRF1010ESL
- IRF1010ESPBF
HEXFET Power MOSFET - IRF1010EZ
AUTOMOTIVE MOSFET - IRF1010EZL
AUTOMOTIVE MOSFET - IRF1010EZLPBF
AUTOMOTIVE MOSFET - IRF1010EZPBF
AUTOMOTIVE MOSFET