BDX53 SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: BDX53 
Gamintojas: Mospec Semiconductor
Pakuotė:
Taikymas: 8a45100v60w
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
BDX53 PDF
Datasheet PDF : View
BDX53 PANAŠUS MODELIS:
- BDX10
NPN - BDX11
Bipolar Device - BDX12
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package - BDX13
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 15A I(C) | TO-3 - BDX14
PNP SILICON TRANSISTOR, EPITAXIAL BASE - BDX14A
SILICON TRANSISTOR, EPITAXIAL BASE - BDX14AA
SILICON TRANSISTOR, EPITAXIAL BASE - BDX14S
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-213AA - BDX16
Silicon Power Transistor - BDX16A
Bipolar Device - BDX18
PNP SILICON TRANSISTOR EPITAXIAL BASE - BDX18A
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 15A I(C) | TO-204AA - BDX18N
PNP SILICON TRANSISTOR EPITAXIAL BASE - BDX20
Silicon Power Transistor - BDX25/66-6
NPN