2SJ507_07 SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: 2SJ507_07 
Gamintojas: Toshiba Semiconductor
Pakuotė:
Taikymas: 8722
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
2SJ507_07 PDF
Datasheet PDF : View
2SJ507_07 PANAŠUS MODELIS:
- 2SJ50
FREQUENCY POWER AMPLIFIER - 2SJ501
Ultrahigh-Speed Switching Applications - 2SJ502
Ultrahigh-Speed Switching Applications - 2SJ503
DC/DC Converter Applications - 2SJ503TP
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-251VAR - 2SJ503TP-FA
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-252VAR - 2SJ504
Silicon Channel High Speed Power Switching - 2SJ504-E
Silicon Channel - 2SJ505
Silicon Channel High Speed Power Switching - 2SJ505(L)
Power switching MOSFET - 2SJ505(L)|2SJ505(S)
- 2SJ505(S)
Power switching MOSFET - 2SJ505L
Silicon Channel High Speed Power Switching - 2SJ505L-E
Silicon Channel - 2SJ505S
Silicon Channel High Speed Power Switching