2SD835 SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: 2SD835 
Gamintojas: Fuji Electric
Pakuotė:
Taikymas:
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
2SD835 PDF
Datasheet PDF : View
2SD835 PANAŠUS MODELIS:
- 2SD803
DIFFUSED JUNCTION MESA - 2SD806
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 650V V(BR)CEO | 50A I(C) - 2SD809
Audio Frequency Power Amplifier,Low Speed Switching - 2SD811
(2SDxxx) TRANSISTOR - 2SD812
Silicon Power Transistor - 2SD812P
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220AB - 2SD812Q
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220AB - 2SD812R
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220AB - 2SD813
EPITAXIAL PLANAR - 2SD814
Silicon epitaxial planer type(For high breakdown voltage low-frequency low-noise amplification) - 2SD814A
Silicon epitaxial planer type(For high breakdown voltage low-frequency low-noise amplification) - 2SD814AQ
TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346 - 2SD814AR
TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346 - 2SD814AS
TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346 - 2SD814Q
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SOT-346