2SD1947A SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: 2SD1947A 
Gamintojas: Toshiba Semiconductor
Pakuotė:
Taikymas:
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
2SD1947A PDF
Datasheet PDF : View
2SD1947A PANAŠUS MODELIS:
- 2SD1902
PNP/NPN Triple Diffused Planar Type Silicon Transistors - 2SD1902Q
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220 - 2SD1902R
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220 - 2SD1902S
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220 - 2SD1903
30V/8A High-Current Switching Applications - 2SD1903Q
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 8A I(C) | TO-126 - 2SD1903R
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 8A I(C) | TO-126 - 2SD1903S
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 8A I(C) | TO-126 - 2SD1904
PNP/NPN Epitaxial Planar Silicon Transistors - 2SD1904Q
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-220 - 2SD1904R
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-220 - 2SD1904S
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-220 - 2SD1905
- 2SD1905Q
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7A I(C) | TO-221VAR - 2SD1905R
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7A I(C) | TO-221VAR