2SD1293M SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: 2SD1293M 
Gamintojas: ROHM
Pakuotė:
Taikymas:
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
2SD1293M PDF
Datasheet PDF : View
2SD1293M PANAŠUS MODELIS:
- 2SD1200
MEDIUM POWER TRANSISTOR - 2SD1200F
MEDIUM POWER TRANSISTOR - 2SD1200FP
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 700MA I(C) | TO-126 - 2SD1200FQ
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 700MA I(C) | TO-126 - 2SD1200FR
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 700MA I(C) | TO-126 - 2SD1205
Silicon epitaxial planer type darlington(For low-frequency amplification) - 2SD1205/2SD1205A
2SD1205. 2SD1205A - NPN Transistor darlington - 2SD1205A
Silicon epitaxial planer type darlington(For low-frequency amplification) - 2SD1205AQ
TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 500MA I(C) | SIP - 2SD1205AR
TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 500MA I(C) | SIP - 2SD1205Q
TRANSISTOR | BJT | DARLINGTON | NPN | 25V V(BR)CEO | 500MA I(C) | SIP - 2SD1205R
TRANSISTOR | BJT | DARLINGTON | NPN | 25V V(BR)CEO | 500MA I(C) | SIP - 2SD1207
Large-Current Switching Applications - 2SD1207R
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-92VAR - 2SD1207S
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-92VAR