2SA636A SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: 2SA636A 
Gamintojas: Inchange Semiconductor Company Limited
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Taikymas:
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Temperatūra: Min °C | Maks °C
Dydis: KB
2SA636A PDF
Datasheet PDF : View
2SA636A PANAŠUS MODELIS:
- 2SA603
PNP SILICON EPITAXIAL TRANSISTOR - 2SA606
PNP/NPN SILICON EPITAXIAL TRANSISTOR - 2SA607
PNP/NPN SILICON EPITAXIAL TRANSISTOR - 2SA608
Low-Frequency General-Purpose Amplifier Applications - 2SA608K
GENERAL PURPOSE SWITCHING APPLICATIONS - 2SA608KNP
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-92 - 2SA608KNPD
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-92 - 2SA608KNPE
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-92 - 2SA608KNPF
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-92 - 2SA608KNPG
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-92 - 2SA608N
Low-Frequency General-Purpose Amplifier Applications - 2SA608NP
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92 - 2SA608NPD
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92 - 2SA608NPE
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92 - 2SA608NPF
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92