2SA1013_07 SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: 2SA1013_07 
Gamintojas: Toshiba Semiconductor
Pakuotė:
Taikymas:
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
2SA1013_07 PDF
Datasheet PDF : View
2SA1013_07 PANAŠUS MODELIS:
- 2SA101
Drift - 2SA1010
Silicon Power Transistor - 2SA1010K
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 7A I(C) | TO-220AB - 2SA1010L
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 7A I(C) | TO-220AB - 2SA1010M
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 7A I(C) | TO-220AB - 2SA1011
POWER TRANSISTORS(1.5A,160V,25W) - 2SA1011D
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-220AB - 2SA1011E
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-220AB - 2SA1011P
High-Voltage Switching, Power Amp,100W Output Predriver Applications - 2SA1012
POWER TRANSISTORS(5A,50V,25W) - 2SA1012-O-TA3-R
HIGH CURRENT SWITCHING APPLICATION - 2SA1012-O-TA3-T
HIGH CURRENT SWITCHING APPLICATION - 2SA1012-O-TF3-R
HIGH CURRENT SWITCHING APPLICATION - 2SA1012-O-TF3-T
HIGH CURRENT SWITCHING APPLICATION - 2SA1012-O-TM3-R
HIGH CURRENT SWITCHING APPLICATION