2N6397G SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: 2N6397G 
Gamintojas: Semiconductor
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Temperatūra: Min °C | Maks °C
Dydis: KB
2N6397G PDF
Datasheet PDF : View
2N6397G PANAŠUS MODELIS:
- 2N630
TRANSISTOR | BJT | PNP | 75V V(BR)CEO | 10A I(C) | TO-3 - 2N6300
DARLINGTON POWER SILICON TRANSISTOR - 2N6301
DARLINGTON POWER SILICON TRANSISTOR - 2N6301SMD
NPN - 2N6301SMD05
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 8A I(C) | SMT - 2N6302
Bipolar Device - 2N6303
Silicon Power Transistors - 2N6304
MICROWAVE DISCRETE POWER TRANSISTORS - 2N6305
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72 - 2N6306
SILICON TRANSISTOR - 2N6307
SILICON TRANSISTOR - 2N6308
POWER SILICON TRANSISTOR - 2N6312
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS - 2N6313
POWER TRANSISTORS(5A,75W) - 2N6314
POWER TRANSISTORS(5A,75W)