2N555501 SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: 2N555501 
Gamintojas: ONSEMI
Pakuotė:
Taikymas:
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
2N555501 PDF
Datasheet PDF : View
2N555501 PANAŠUS MODELIS:
- 2N555
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3A I(C) | TO-3 - 2N5550
high-voltage transistors - 2N5550/D
Amplifier Transistor NPN - 2N555000
Amplifier Transistor - 2N555007
Amplifier Transistors Silicon - 2N5550G
Amplifier Transistors Silicon - 2N5550RLRA
Amplifier Transistors - 2N5550RLRP
Amplifier Transistors - 2N5550RLRPG
Amplifier Transistors Silicon - 2N5550S
EPITAXIAL PLANAR TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE) - 2N5550_00
Amplifier Transistor - 2N5550_07
Amplifier Transistors NPN Silicon - 2N5551
General Purpose Amplifier - 2N5551-A-AB3-B
HIGH VOLTAGE SWITCHING TRANSISTOR - 2N5551-A-AB3-K
HIGH VOLTAGE SWITCHING TRANSISTOR