2N1131J SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: 2N1131J 
Gamintojas: Raytheon Company
Pakuotė:
Taikymas:
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
2N1131J PDF
Datasheet PDF : View
2N1131J PANAŠUS MODELIS:
- 2N1100
TRANSISTOR | BJT | PNP | 65V V(BR)CEO | 15A I(C) | TO-36 - 2N1101
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-22 - 2N1102
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-22 - 2N111
Integrated N-Channel PowerTrench MOSFET Schottky Diode - 2N1114
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-5 - 2N1115
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 125MA I(C) | CAN - 2N1116
Leaded Small Signal Transistor General Purpose - 2N1117
Small Signal Transistors - 2N1118
Leaded Small Signal Transistor General Purpose - 2N1118A
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 50MA I(C) | TO-5 - 2N1119
Leaded Small Signal Transistor General Purpose - 2N1120
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 15A I(C) | TO-41 - 2N1122
TRANSISTOR | BJT | PNP | 11V V(BR)CEO | 50MA I(C) | TO-24 - 2N1131
POWER SILICON TRANSISTOR - 2N1131A
SMALL SIGNAL TRANSISTORS