1N5519UR SPECIFIKACIJAS IR TAIKYMAS
Elektronikos dalys: 1N5519UR 
Gamintojas: MICROSEMI[Microsemi Corporation]
Pakuotė:
Taikymas: 500mw
Pin:
Temperatūra: Min °C | Maks °C
Dydis: KB
1N5519UR PDF
Datasheet PDF : View
1N5519UR PANAŠUS MODELIS:
- 1N5517
SCHOTTKY RECTIERS SILICON RECTIFIER DIODES - 1N5518
VOLTAGE AVALANCHE DIODES DO-35 - 1N5518-1
VOLTAGE AVALANCHE DIODES DO-35 - 1N5518A
0.4W VOLTAGE AVALANCHE DIODES - 1N5518A-1
Voltage Surface Mount Avalanche Diodes - 1N5518ATR-1
Voltage Surface Mount Avalanche Diodes - 1N5518AUR
LEADLESS PACKAGE SURFACE MOUNT ZENER DIODE 500mW - 1N5518AUR-1
Voltage Surface Mount Avalanche Diodes - 1N5518AURTR-1
Voltage Surface Mount Avalanche Diodes - 1N5518B
REVERSE LEAKAGE CHARACTERISTICS - 1N5518B(DO35)
Low Voltage Avalanche Zener - 1N5518B-1
REVERSE LEAKAGE CHARACTERISTICS - 1N5518BTR-1
Voltage Surface Mount Avalanche Diodes - 1N5518BUR
LEADLESS PACKAGE SURFACE MOUNT ZENER DIODE, 500mW - 1N5518BUR-1
Voltage Surface Mount Avalanche Diodes